Monte carlo simulation of dark current in an irradiated semiconductor. The numerical constants for this simuatlion are:
q = 1.6e-19 # Elementary charge, C k_B = 8.617e-5 # Boltzmann constant, eV/K T0 = 300.0 # Reference temperature, K
E_g0 = 1.12 # Bandgap energy at T0=300K, eV N_c0 = 2.8e19 # Eff. density of states conduction band at 300K, cm^-3 N_v0 = 1.04e19 # Eff. density of states valence band at 300K, cm^-3 alpha = 4.73e-4 # Varshni parameter (eV/K) beta = 636 # Varshni parameter (K)
E_DL = 0.6 # Deep level energy above valence band, eV sigma_e = 1e-15 # Capture cross-section for electrons, cm^2 sigma_h = 1e-15 # Capture cross-section for holes, cm^2 v_e = 1e7 # Thermal velocity of electrons, cm/s v_h = 1e7 # Thermal velocity of holes, cm/s N_DL_initial = 1e15 # Initial defect density, cm^-3
C_Auger = 1e-31 # Auger recombination coefficient, cm^6/s
W = 1e-4 # Depletion width, cm A = 1.0 # Area, cm^2 Volume = W * A # Volume, cm^3
f_anneal = 1.0 # Annealing factor (no annealing if =1) n_splits = 4 # For splitting the device into sub-sections tau_anneal = 200 # Annealing time scale (s) G = 1e10 # Generation rate, cm^-3 s^-1
dose_scale = 1e11 # Scale for dose exponential